Anomalous transport of indirect excitons in coupled AlAs/GaAs quantum wells

被引：12

作者：

Butov, LV ^{[1
]}

Zrenner, A ^{[1
]}

Hagn, M ^{[1
]}

Abstreiter, G ^{[1
]}

Bohm, G ^{[1
]}

Weimann, G ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI, INST SOLID STATE PHYS, CHERNOGOLOVKA 142432, RUSSIA

来源：

SURFACE SCIENCE | 1996年 / 361卷 / 1-3期

关键词：

electrical transport; photoluminescence; quantum wells; semiconductor-semiconductor heterostructures;

D O I：

10.1016/0039-6028(96)00394-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The time-of-flight method has been used to study the transport of indirect excitons in AlAs/GaAs CQW structures at T greater than or equal to 350 mK and B less than or equal to 14 T. A large increase of the exciton diffusivity is observed at high magnetic fields and low temperatures, when exciton superfluidity is expected to occur.

引用

页码：243 / 246

页数：4

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