Numerical simulation of tunnel diodes for multi-junction solar cells

被引：86

作者：

Hermle, A. ^{[1
]}

Letay, G. ^{[2
]}

Philipps, S. P. ^{[1
]}

Bett, A. W. ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany

[2] Synopsys, CH-8050 Zurich, Switzerland

来源：

PROGRESS IN PHOTOVOLTAICS | 2008年 / 16卷 / 05期

关键词：

simulation; tunnel diodes; III-V multi-junction solar cells;

D O I：

10.1002/pip.824

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This work presents efforts to simulate numerically the current voltage (IV) curve of a III-V based Esaki tunnel diode. Using a tunneling model, which takes into account the full nonlocality of the barrier, a good agreement between measured and simulated IV curves of a GaAs tunnel diode was achieved. The influence of a series resistance effect as well as the importance of trap assisted tunneling (TAT) could be shown. In addition, we present a two-dimensional model of a III-V multi-junction solar cell including the numerical model of the investigated Esaki tunnel diode. Copyright (C) 2008 John Wiley & Sons, Ltd.

引用

页码：409 / 418

页数：10

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