Aligned growth of isolated single-walled carbon nanotubes programmed by atomic arrangement of substrate surface

被引:144
作者
Ago, H
Nakamura, K
Ikeda, K
Uehara, N
Ishigami, N
Tsuji, M
机构
[1] Kyushu Univ, Inst Chem & Mat Engn, Kasuga, Fukuoka 8168580, Japan
[2] Kyushu Univ, Grad Sch Engn, Kasuga, Fukuoka 8168580, Japan
[3] JST, CREST, Kasuga, Fukuoka 8168580, Japan
关键词
D O I
10.1016/j.cplett.2005.04.054
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Highly aligned and isolated single-walled carbon nanotubes (SWTs) were grown on the R-face (I 10 2) and A-face (1 12 0) surfaces of sapphire (Al2O3) substrates by catalytic chemical vapor deposition. On the basis of the electron backscatter diffraction (EBSD) analysis, we have found that the SWNTs are aligned along the specific crystalline directions corresponding to the anisotropic pseudo-one-dimensional array of Al atoms on these surfaces. This suggests that the Al array guides the SAINT growth due to the strong interaction between the Al atoms and nanotubes. On the other hand, a random orientation has been observed for the SWNTs grown on the C-face (0 0 0 1) substrate, reflecting the isotropic arrangement of Al atoms. These findings indicate that the strong interaction between the SWNTs and substrate surface is applicable for patterning or integrating SVvNTs in nanoelectronics applications. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:433 / 438
页数:6
相关论文
共 22 条
[1]   Roles of metal-support interaction in growth of single- and double-walled carbon nanotubes studied with diameter-controlled iron particles supported on MgO [J].
Ago, H ;
Nakamura, K ;
Uehara, N ;
Tsuji, M .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (49) :18908-18915
[2]   Growth of double-wall carbon nanotubes with diameter-controlled iron oxide nanoparticles supported on MgO [J].
Ago, H ;
Nakamura, K ;
Imamura, S ;
Tsuji, M .
CHEMICAL PHYSICS LETTERS, 2004, 391 (4-6) :308-313
[3]  
[Anonymous], 1990, INORG CHEM
[4]   Aligning single-wall carbon nanotubes with an alternating-current electric field [J].
Chen, XQ ;
Saito, T ;
Yamada, H ;
Matsushige, K .
APPLIED PHYSICS LETTERS, 2001, 78 (23) :3714-3716
[5]   The influence of catalyst chemical state and morphology on carbon nanotube growth [J].
de los Arcos, T ;
Garnier, MG ;
Seo, JW ;
Oelhafen, P ;
Thommen, V ;
Mathys, D .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (23) :7728-7734
[6]   Catalyst-free growth of ordered single-walled carbon nanotube networks [J].
Derycke, V ;
Martel, R ;
Radosvljevic, M ;
Ross, FMR ;
Avouris, P .
NANO LETTERS, 2002, 2 (10) :1043-1046
[7]   Chemical vapor deposition of single-wall carbon nanotubes on iron-film-coated sapphire substrates [J].
Hongo, H ;
Yudasaka, M ;
Ichihashi, T ;
Nihey, F ;
Iijima, S .
CHEMICAL PHYSICS LETTERS, 2002, 361 (3-4) :349-354
[8]   Long and oriented single-walled carbon nanotubes grown by ethanol chemical vapor deposition [J].
Huang, LM ;
Cui, XD ;
White, B ;
O'Brien, SP .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (42) :16451-16456
[9]   Oriented long single walled carbon nanotubes on substrates from floating catalysts [J].
Huang, SM ;
Cai, XY ;
Du, CS ;
Liu, J .
JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (48) :13251-13254
[10]   Growth mechanism of oriented long single walled carbon nanotubes using "fast-heating" chemical vapor deposition process [J].
Huang, SM ;
Woodson, M ;
Smalley, R ;
Liu, J .
NANO LETTERS, 2004, 4 (06) :1025-1028