Size dependence of electrical resistivity 1D-layered nanostructures

被引:11
作者
Qin, RS [1 ]
Zhou, BL [1 ]
机构
[1] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA
来源
NANOSTRUCTURED MATERIALS | 1996年 / 7卷 / 07期
关键词
D O I
10.1016/S0965-9773(96)00047-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Landauer electrical resistivity R of one-dimensional (1D) layered nanostructures is calculated. The analysis of the logarithm of the resistance as a function of grain size reveals that there is a minimum value of resistivity R(min) when the grain size takes a value of d(c), where d(c) depends on the barrier height and excess volume of interface. R increases in the region of d(cl) > d > d(c), where d is the grain size, and d(cl) is another critical value of grain size. The mechanism of the anomalous resistivity behavior is discussed briefly.
引用
收藏
页码:741 / 748
页数:8
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