Formation and relaxation of 2D island arrays in metal(100) homoepitaxy

被引：11

作者：

Stoldt, CR ^{[1
]}

Cadilhe, AM

Bartelt, MC

Jenks, CJ

Thiel, PA

Evans, JW

机构：

[1] Iowa State Univ, Dept Chem, Ames, IA 50011 USA

[2] Iowa State Univ, Dept Math, Ames, IA 50011 USA

[3] Iowa State Univ, IPRT, Ames, IA 50011 USA

[4] Iowa State Univ, Ames Lab, Ames, IA 50011 USA

[5] Sandia Natl Labs, Livermore, CA 94550 USA

来源：

PROGRESS IN SURFACE SCIENCE | 1998年 / 59卷 / 1-4期

关键词：

D O I：

10.1016/S0079-6816(98)00036-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present a comprehensive analysis of both the formation of near-square islands during deposition in submonolayer metal(100) homoepitaxy, as well as the subsequent post-deposition relaxation of these island arrays. We highlight recent fundamental advances in our understanding of the nucleation and growth of islands, as well as of the kinetic pathways controlling the relaxation of island arrays (including a study of the "collision" and coalescence of diffusing islands). Extensive Scanning Tunneling Microscopy results are presented for the Ag/Ag(100) system at 295K, and these are analyzed utilizing kinetic Monte Carlo simulations of appropriate lattice-gas models.

引用

页码：67 / 77

页数：11

共 23 条

[1]

[Anonymous], CURRENT TOPICS MAT A

[2] High-resolution LEED profile analysis and diffusion barrier estimation for submonolayer homoepitaxy of Ag/Ag(100) [J].