Doping and hydrogen in wide gap oxides

被引：58

作者：

Robertson, J ^{[1
]}

Peacock, PW ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

THIN SOLID FILMS | 2003年 / 445卷 / 02期

关键词：

oxide; wide gap; doping; hydrogen;

D O I：

10.1016/j.tsf.2003.08.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The general conditions for doping are considered. Doping by hydrogen is then considered, and whether a single rule separates those oxides in which hydrogen forms only deep states and those in which it acts as a donor. Hydrogen is calculated to act as a shallow donor in oxides ZrO2, HfO2, SnO2, La2O3, Y2O3, TiO2, SrTiO3 and LaAlO3, but it is deep in the oxides SiO2, Al2O3, ZrSiO4, HfSiO4, and SrZrO3. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：155 / 160

页数：6

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