Effective dark current suppression with asymmetric MSM photodetectors in Group IV semiconductors

被引：106

作者：

Chui, CO ^{[1
]}

Okyay, AK ^{[1
]}

Saraswat, KC ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 11期

关键词：

germanium; MSM devices; optical fiber devices; optical interconnections; photodetectors; silicon;

D O I：

10.1109/LPT.2003.818683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated for the first time, with both simulations and experiments, the application of an asymmetric metal electrode scheme in Group IV metal-semiconductor-metal photodetectors (MSM-PDs) to effectively lower dark current (I-dark) without sacrificing the photocurrent (I-photo) substantially. A new metric was introduced by normalizing the photocurrent-to-dark current ratio to the input optical power (NPDR) to provide an objective assessment of the detector performance. Improvement of at least 1.4 times in NPDR was obtained with asymmetric MSM-PDs. Finally, the impact of MSM sizing on NPDR was also addressed.

引用

页码：1585 / 1587

页数：3

共 7 条

[1] Chui CO, 2002, IEEE ELECTR DEVICE L, V23, P473, DOI [10.1109/LED.2002.801319, 10.1009/LED.2002.801319]
[2] Low-energy electron detection in microcolumns
Fresser, HS
Prins, FE
Kern, DP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2553 - 2555
[3] EPITAXIAL LIFTOFF INGAAS/INP MSM PHOTODETECTORS ON SI
HERRSCHER, M
GRUNDMANN, M
DROGE, E
KOLLAKOWSKI, S
BOTTCHER, EH
BIMBERG, D
[J]. ELECTRONICS LETTERS, 1995, 31 (16) : 1383 - 1384
[4] Monolithic integration of near-infrared Ge photodetectors with Si complementary metal-oxide-semiconductor readout electronics
Masini, G
Cencelli, V
Colace, L
De Notaristefani, F
Assanto, G
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (18) : 3268 - 3270
[5] INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS FOR LONG WAVELENGTH OPTICAL COMMUNICATIONS
SOOLE, JBD
SCHUMACHER, H
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (03) : 737 - 752
[6] Walden R. H., 1998, International Journal of High Speed Electronics and Systems, V9, P631, DOI 10.1142/S0129156498000269
[7] InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights
Wohlmuth, WA
Arafa, M
Mahajan, A
Fay, P
Adesida, I
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (23) : 3578 - 3580

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