Evolution of CdS/CdTe device performance during Cu diffusion

被引：22

作者：

Gessert, TA ^{[1
]}

Smith, S ^{[1
]}

Moriatry, T ^{[1
]}

Young, M ^{[1
]}

Asher, S ^{[1
]}

Johnston, S ^{[1
]}

Duda, A ^{[1
]}

DeHart, C ^{[1
]}

机构：

[1] NREL, Golden, CO 80401 USA

来源：

CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488126

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cu diffusion from a ZnTe:Cu/Ti back contact onto CdS/CdTe thin-film solar cells is studied. We find if Cu diffusion is insufficient, the entire CdTe layer is depleted. However, if Cu diffusion is excessive, the depletion width can become too narrow to provide optimum current collection. This analysis suggests that most contact processes used for CdS/CdTe devices are optimized (often unknowingly) to result in a depletion width that extends just far enough into the CdTe to yield the highest possible field in the region where light absorption occurs. Analysis of the samples with very high Cu concentration also suggests that Cu doping of CdS may affect carrier collection from the CdS.

引用

页码：291 / 294

页数：4

共 8 条

[1] Determination of Cu in CdTe/CdS devices before and after accelerated stress testing [J].