A chemical kinetics model to explain the abrasive size effect on chemical mechanical polishing

被引：25

作者：

Chen, PH ^{[1
]}

Huang, BW ^{[1
]}

Shih, HC ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

THIN SOLID FILMS | 2005年 / 476卷 / 01期

关键词：

planarization; polymers; oxides;

D O I：

10.1016/j.tsf.2004.09.049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A chemical kinetics model was proposed to describe the abrasive size effect on chemical mechanical polishing (CMP). The model is based on the consideration of a pad as a sort of catalyst and the re-adhering of abrasives due to the large size. Therefore, a general equation was deduced according the chemical kinetics methodology to give the meanings of the size effect. Finally, according a set of data related to the abrasive size effect on CMP, a possible form can be PR = alpha CCCTXACWAn/[beta + gamma XACWAn] where alpha, beta, gamma and n are the parameters in a CMP system. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：130 / 136

页数：7

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