MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages

被引：71

作者：

Chen, K ^{[1
]}

Wann, HC ^{[1
]}

Dunster, J ^{[1
]}

Ko, PK ^{[1
]}

Hu, CM ^{[1
]}

Yoshida, M ^{[1
]}

机构：

[1] HITACHI LTD,DEVICE DEV CTR,OME,TOKYO 198,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 10期

关键词：

D O I：

10.1016/0038-1101(96)00059-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The widely accepted universal dependence of N- and P-MOSFETs carrier mobility on effective vertical field E(eff) = (eta Q(inv) + Q(b))/epsilon(Si) has been re-examined. New empirical mobility models for both electrons and holes expressed in terms of T-ox, V-t and V-g explicitly are formulated. New empirical mobility models are confirmed with experimental data taken from devices of different technologies. It is also shown that the hole mobility of both the surface and buried channel P-MOSFETs can be unified for the first time by a single universal mobility equation, rather than two separate equations as previously thought necessary. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：1515 / 1518

页数：4