Mid-infrared GaSb-InAs-based multiple quantum well lasers

被引：11

作者：

Baranov, AN ^{[1
]}

Bertru, N ^{[1
]}

Cuminal, Y ^{[1
]}

Boissier, G ^{[1
]}

Rouillard, Y ^{[1
]}

Nicolas, JC ^{[1
]}

Grech, P ^{[1
]}

Joullie, A ^{[1
]}

Alibert, C ^{[1
]}

机构：

[1] Univ Montpellier 2, Ctr Elect & Microoptoelect Montepellier CEM2, UMR CNRS 5507, F-34095 Montpellier 05, France

来源：

IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II | 1998年 / 3284卷

关键词：

semiconductor lasers; quantum wells; type-II structures; molecular beam epitaxy;

D O I：

10.1117/12.304451

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report GaInAsSb/GaSb multiple quantum well lasers with type-II band alignment operating at room temperature. Basic properties of GaInAsSb/GaSb system in presence of strains are presented. Room temperature lasing has been achieved at wavelengths up to 2.65 mu m. For the first time, stimulated emission has been obtained from a type-III quantum well structure at room temperature at 1.98 mu m and 2.32 mu m for the structures with 6- and 12-Angstrom-thick InAs quantum wells, respectively. Modification of the band structure near interfaces of the type-II quantum wells due to carrier injection is shown to be a decisive factor allowing to obtain low threshold lasing in quantum well structures with indirect radiative recombination.

引用

页码：247 / 257

页数：11