Electron spin resonance studies of Cu(In,Ga)Se2 thin films

被引:8
作者
Aubin, V
Binet, L
Guillemoles, JF
机构
[1] Ecole Natl Super Chim Paris, Lab Electrochim, LECA, UMR 7575,CNRS, F-75231 Paris, France
[2] Ecole Natl Super Chim Paris, Lab Chim Appl Etat Solide, UMR 7574, CNRS, F-75231 Paris, France
关键词
Cu(In; Ga)Se-2; ESR; defects; non stoichiometry;
D O I
10.1016/S0040-6090(03)00232-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cu(In,Ga)Se-2 (CIGS) powders obtained from co-evaporated films were investigated by electron spin resonance (ESR). They were compared to CuInSe2 and CIGS powder annealed under various Se pressures. Several paramagnetic centers were found and studied. One of the signals was identified as originating from Fe (III) ions and their concentration in co-evaporated, device grade quality CIGS (10(17) cm(-3)) was obtained. Other signals were attributed either to surface or bulk intrinsic defects. The ESR spectra obtained for different temperatures and microwave powers yielded the fundamental characteristics of the paramagnetic centers. The study of the dipolar broadening of the ESR lines of the intrinsic defects showed that the defect distribution is inhomogeneous and that they tend to form aggregates. The origin and behavior of intrinsic defects in CIGS will be discussed in light of these new ESR data. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:167 / 171
页数:5
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