Growth of manganese oxide thin films by atomic layer deposition

被引：102

作者：

Nilsen, O ^{[1
]}

Fjellvåg, H ^{[1
]}

Kjekshus, A ^{[1
]}

机构：

[1] Univ Oslo, Dept Chem, N-0315 Oslo, Norway

来源：

THIN SOLID FILMS | 2003年 / 444卷 / 1-2期

关键词：

manganese oxide; atomic layer deposition (ALD);

D O I：

10.1016/S0040-6090(03)01101-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of manganese oxide are made by the ALD (atomic layer deposition) technique using Mn(thd)(3) (Hthd=2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Pulse parameters for ALD-type growth are established and such growth can be achieved at deposition temperatures between 138 and 210 degreesC. Films have been deposited on both soda-lime glass and Si(100) single crystals. The electrical resistivities of as-deposited films grown on soda-lime glass are measured to be 0.3-3.2 Omega cm (linear four-point-probe measurements). (C) 2003 Elsevier B.V. All rights reserved.

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页码：44 / 51

页数：8

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