Band Engineering in Graphene with Superlattices of Substitutional Defects

被引:83
作者
Casolo, S. [1 ]
Martinazzo, R. [1 ,2 ]
Tantardini, G. F. [1 ,2 ]
机构
[1] Univ Milan, Dipartimento Chim Fis & Elettrochim, I-20133 Milan, Italy
[2] CIMaINa, Interdisciplinary Ctr Nanostruct Mat & Interfaces, I-20133 Milan, Italy
关键词
INITIO MOLECULAR-DYNAMICS;
D O I
10.1021/jp109741s
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigate graphene superlattices of nitrogen and boron substitutional defects. Using symmetry arguments and electronic structure calculations we show how such superlattices can be used to modify graphene band structure. Specifically, depending on the superlattice symmetry, the structures considered here can either preserve the Dirac cones (D-6h, superlattices) or open a band gap (D-3h). Relevant band parameters (carrier effective masses, group velocities, and gaps, when present) are found to depend on the superlattice constant n as 1/n(P) where p is in the range 1-2, depending on the case considered. Overall, the results graphene band structure to a great extent by modifying a few superlattice parameters. presented here show how one can tune the graphene band structure to a great extent by modifying a few superlattice parameters.
引用
收藏
页码:3250 / 3256
页数:7
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