Thermoelectric properties of (Ti,Zr,Hf)CoSb type half-heusler compounds

被引:51
作者
Sekimoto, T [1 ]
Kurosaki, K [1 ]
Muta, H [1 ]
Yamanaka, S [1 ]
机构
[1] Osaka Univ, Dept Nucl Engn, Grad Sch Engn, Suita, Osaka 5650871, Japan
关键词
half-Heusler compound; electrical resistivity; thermoelectric power; thermal conductivity; Jonker plot;
D O I
10.2320/matertrans.46.1481
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Half-Heusler compounds have a possibility as a new thermoelectric material due to the large thermoelectric power and low thermal conductivity derived from the band structure and voids in the crystal, respectively. Among these materials, we have paid attention to (Ti,Zr,Hf)CoSb system, and have investigated the improvement of the thermoelectric figure of merit from the measurements of the electrical resistivity, thermoelectric power, and thermal conductivity. We obtained the largest ZT = 0.027 on TiCoSb at 921 K. From the analysis by Jonker plot and the difference of the atomic radii between titanium and cobalt on TiCoSb, it is indicated that the dispersion between our data and a few previous data was originated in two effects: one is deviations from the stoichiometric composition by evaporation of antimony on arc melting, and the other is relaxation of the structural disorder by annealing.
引用
收藏
页码:1481 / 1484
页数:4
相关论文
共 38 条
[1]   NARROW-BAND IN THE INTERMETALLIC COMPOUNDS TINISN, ZRNISN, HFNISN [J].
ALIEV, FG ;
KOZYRKOV, VV ;
MOSHCHALKOV, VV ;
SCOLOZDRA, RV ;
DURCZEWSKI, K .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1990, 80 (03) :353-357
[2]   GAP AT THE FERMI LEVEL IN THE INTERMETALLIC VACANCY SYSTEM TINISN, ZRNISN, HFNISN [J].
ALIEV, FG ;
BRANDT, NB ;
MOSHCHALKOV, VV ;
KOZYRKOV, VV ;
SKOLOZDRA, RV ;
BELOGOROKHOV, AI .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1989, 75 (02) :167-171
[3]  
[Anonymous], 1972, CRYSTAL CHEM PHYS ME
[4]   Electronic properties of the half-Heusler compounds Co1-xFexTiSb -: art. no. 041101 [J].
Degiorgi, L ;
Sologubenko, AV ;
Ott, HR ;
Drymiotis, F ;
Fisk, Z .
PHYSICAL REVIEW B, 2002, 65 (04) :1-4
[5]   Ternary transition metal antimonides and bismuthides with MgAgAs-type and filled NiAs-type structure [J].
Evers, CBH ;
Richter, CG ;
Hartjes, K ;
Jeitschko, W .
JOURNAL OF ALLOYS AND COMPOUNDS, 1997, 252 (1-2) :93-97
[6]   Origin and properties of the gap in the half-ferromagnetic Heusler alloys [J].
Galanakis, I ;
Dederichs, PH ;
Papanikolaou, N .
PHYSICAL REVIEW B, 2002, 66 (13) :1-10
[7]  
GLADYSEVSKIJ EL, 1963, TITAN SPLAVY SSSR, P71
[8]  
JEITSCHKO W, 1970, METALL TRANS, V1, P3159
[9]  
JONKER GH, 1968, PHILIPS RES REP, V23, P131
[10]   Study of the 18-electron band gap and ferromagnetism in semi-Heusler compounds by nea-spin-polarized electronic band structure calculations [J].
Jung, D ;
Koo, HJ ;
Whangbo, MH .
JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 2000, 527 :113-119