Electron temperature control with grid bias in inductively coupled argon plasma

被引:62
作者
Hong, JI
Seo, SH
Kim, SS
Yoon, NS
Chang, CS
Chang, HY
机构
[1] Korean Adv Inst Sci Technol, Dept Phys, Taejon 305701, South Korea
[2] Korean Basic Sci Inst, Taejon 305333, South Korea
关键词
D O I
10.1063/1.873342
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The mechanism of controlling electron temperature with grid-biased voltage is studied experimentally and the relevant physics is discussed in an inductively coupled Ar discharge. To obtain the electron density and electron temperature, the electron energy distribution functions (EEDFs) are measured with a Langmuir probe. As the grid voltage decreases negatively, the effective electron temperature is controlled from 2.0 to 0.6 eV and the electron density changes from 3x10(10) to 2x10(10) cm(-3) in the diffusion region, while the effective electron temperature and electron density are not changed in the source region. The dependence of such various parameters, as electron density, electron temperature, plasma potential in each region, and so on, on the applied voltage, is presented. The functional relations between the measured physical quantities are well explained based on a global particle and energy balance relations. (C) 1999 American Institute of Physics. [S1070-664X(99)04503-6].
引用
收藏
页码:1017 / 1028
页数:12
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