Implantation-produced structural damage in InxGa1-xN

The influence of In content on the accumulation of structural damage in InxGa1-xN films (with x=0.0-0.2) under heavy-ion bombardment is studied by a combination of Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Results show that an increase in In concentration strongly suppresses dynamic annealing processes and, hence, enhances the buildup of stable lattice disorder in InGaN under ion bombardment, A comparison of the damage buildup behavior and defect microstructure in InGaN with those in GaN is presented. Results of this study may have significant technological implications for estimation and control of implantation-produced damage in InGaN/GaN heterostructures. (C) 2001 American Institute of Physics.