Microwave characterization of thin film materials for interconnections of advanced packaging

被引:2
作者
Flechet, B
Salik, R
Tao, JW
Angenieux, G
机构
来源
3RD INTERNATIONAL SYMPOSIUM ON ADVANCED PACKAGING MATERIALS - PROCESSES, PROPERTIES, AND INTERFACES - PROCEEDINGS | 1997年
关键词
D O I
10.1109/ISAPM.1997.581278
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Low permittivity insulator layers made of new organic or inorganic materials, associated to conductive layers, with thickness less than one micrometer are more and more used to develop interconnections of microwave or high speed circuits, and electronic packaging. Such thin film microstrip lines have been modeled between 1GHz and 40GHz using a rigorous full-wave method based on a modified transverse resonance technique. Then, comparison between theoretical and experimental propagation constants provides to extract in-situ complex permittivity of insulator and conductivity of conductors by optimization technique.
引用
收藏
页码:139 / 142
页数:4
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