de Haas-van Alphen effect investigation of the electronic structure of Al-substituted MgB2 -: art. no. 060507

被引：19

作者：

Carrington, A

Fletcher, JD

Cooper, JR

Taylor, OJ

Balicas, L

Zhigadlo, ND

Kazakov, SM

Karpinski, J

Charmant, JPH

Kortus, J

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Univ Cambridge, Dept Phys & IRC Superconduct, Cambridge CB3 0HE, England

[3] Florida State Univ, Natl High Magenet Field Lab, Tallahassee, FL 32306 USA

[4] Swiss Fed Inst Technol, Lab Festkorperphys, CH-8093 Zurich, Switzerland

[5] Univ Bristol, Sch Chem, Bristol BS8 1TS, Avon, England

[6] Inst Phys & Chem Mat Strasbourg, Strasbourg, France

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevB.72.060507

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a de Haas-van Alphen (dHvA) study of the electronic structure of Al-doped crystals of MgB2. We have measured crystals with similar to 7.5% Al, which have a T-c of 33.6 K (similar to 14% lower than pure MgB2). dHvA frequencies for the sigma-tube orbits in the doped samples are lower than in pure MgB2, implying a 16 +/- 2 % reduction in the number of holes in this sheet of Fermi surface. The mass of the quasiparticles on the larger sigma orbit is lighter than the pure case indicating a reduction in electron-phonon coupling constant lambda. These observations are compared with band-structure calculations, and found to be in excellent agreement.

引用

页数：4

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