Fabrication of well-ordered CuO nanowire arrays by direct oxidation of sputter-deposited Cu3N film

被引：39

作者：

Fan, X. Y. ^{[1
]}

Wu, Z. G. ^{[1
]}

Yan, P. X. ^{[1
,2
]}

Geng, B. S. ^{[1
]}

Li, H. J. ^{[1
]}

Li, C. ^{[1
]}

Zhang, P. J. ^{[1
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

[2] Chinese Acad Sci, Inst Chem & Phys, Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China

来源：

MATERIALS LETTERS | 2008年 / 62卷 / 12-13期

关键词：

well-ordered CuO nanowire arrays; Cu3N film; direct oxidation;

D O I：

10.1016/j.matlet.2007.10.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Well-ordered CuO nanowire arrays were prepared through directly annealing the sputter-deposited Cu3N film at 300 degrees C for 90 min in atmosphere. The XRD and XPS results indicate that the Cu3N film completely changes to CuO without any other oxides such as after annealed. XPS results also indicate that there is also residual nitrogen in the CuO nanowire arrays. The FE-SEM and TEM images show that the CuO nanowire arrays are vertical to the substrate with a diameter of about 20 nm and a length of similar to 0.6 mu m. The growth mechanism is also discussed preliminarily. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1805 / 1808

页数：4

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