Electron-electron interaction, quantum interference and spin fluctuation effects in the resistivity of Fe-rich Fe-Zr metallic glasses

Electrical resistivity (rho) measurements have been performed in various temperature ranges on different batches of samples with nominal composition x = 0 and 1 in the amorphous alloy series Fe90+xZr10-x. An elaborate data analysis brings out clearly the actual functional dependences of rho on temperature (T) in different temperature ranges. The results of this analysis, when discussed in the light of existing theories, permit identification of the dominant mechanisms of electrical transport in different temperature regions as electron-diffuson (non-propagating longitudinal spin fluctuations) scattering for T less than or equal to 10 K, enhanced electron-electron interaction (EEI) effects in the range 10 K less than or equal to T less than or equal to 25 K and quantum interference (QI) effects, electron-phonon (e-ph) as well as electron-spin fluctuations scattering in different temperature ranges above 25 K. EEI and QI contributions to rho, in turn, yield fairly accurate values for the diffusion constant (that obey the Einstein relation) and the dephasing time. Out of the inelastic scattering processes such as e-ph scattering, spin-orbit scattering and spin-flip scattering that destroy phase coherence, e-ph scattering seems to be the most effective dephasing mechanism. Dephasing persists to temperatures well. above the Curie point and Debye temperature in the amorphous alloys in question.