Anomalous temperature-dependent magnetization of Ni films on semiconductor substrates

被引:4
作者
Haque, SA [1 ]
Matsuo, A [1 ]
Seino, Y [1 ]
Yamamoto, Y [1 ]
Yamada, S [1 ]
Hori, H [1 ]
机构
[1] Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan
关键词
hysteresis curve; ferromagnetic films; hysteresis-thermal; magnetization-temperature dependent;
D O I
10.1016/S0304-8853(00)01031-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Magnetization, M(T, H = const.) and M(H, T = const.), of Ni films deposited on n-GaAs(1 0 0) and Si(1 0 0) substrates has been performed in magnetic fields both parallel and perpendicular to the film plane. The unsaturated moment of Ni films on n-GaAs substrate around the hysteresis exhibits an anomalous magnetization with temperature in parallel field. In perpendicular field this effect disappears but an undulated hysteresis curve has been observed. Similar Ni films on Si substrate do not exhibit any remarkable anomaly. The effect is likely to originate from the interface of Ni and GaAs. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1591 / 1593
页数:3
相关论文
共 4 条
[1]  
CHEN LJ, 1984, MATER RES SOC S P, V31, P165
[2]   ANOMALOUS MAGNETIZATION OF GAAS [J].
DATTA, T ;
BARRIENTOS, A ;
AMIRZADEH, J ;
JONES, ER .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :3555-3557
[3]  
GRIGORIEV IS, 1997, HDB PHYSICAL QUANTIT, P287
[4]   MAGNETORESISTANCE ASSOCIATED WITH ANTIFERROMAGNETIC INTERLAYER COUPLING SPACED BY A SEMICONDUCTOR IN FE/SI MULTILAYERS [J].
INOMATA, K ;
YUSU, K ;
SAITO, Y .
PHYSICAL REVIEW LETTERS, 1995, 74 (10) :1863-1866