Chemical trend of Fermi-level shift in transition metal-doped TiO2 films

被引：15

作者：

Matsumoto, Yuji ^{[1
]}

Katayama, Masao ^{[1
]}

Abe, Takatoshi ^{[1
]}

Ohsawa, Takeo ^{[1
]}

Ohkubo, Isao ^{[2
,3
]}

Kumigashira, Hiroshi ^{[2
,3
]}

Oshima, Masaharu ^{[2
,3
]}

Koinuma, Hideomi ^{[4
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[3] Univ Tokyo, JST CREST, Bunkyo Ku, Tokyo 1138656, Japan

[4] Univ Tokyo, Grad Sch Frontier Sci, Chiba 2778568, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2010年 / 118卷 / 1383期

基金：

日本科学技术振兴机构;

关键词：

Titanium dioxide; Combinatorial laser MBE; Synchrotron radiation; Photoemission; X-ray absorption spectroscopy; Transition metal; Impurity doping; RAY-ABSORPTION-SPECTROSCOPY; PHOTOEMISSION SPECTRA; ELECTRONIC-STRUCTURE; SURFACES; PHOTOCATALYST; VALENCE; OXIDES;

D O I：

10.2109/jcersj2.118.993

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of doping a wide range of transition metals (TMs) including V, Cr, Mn, Fe, Co, and Ni into rutile TiO2 films grown on Nb-doped TiO2(110) single-crystal substrates was investigated by photoemission spectroscopy and X-ray absorption spectroscopy. For all TM-doped TiO2 films, the Ti 2p and O is core levels were similarly shifted to lower binding energies with increasing film thickness and the shifts were similarly saturated at a film thickness of about 15 nm. These peak shifts could be interpreted in terms of the Fermi level shift, indicating that dopants trap excess electrons from the Ti 3d band like acceptors. The present systematic data revealed that the magnitude of the saturated Fermi level shift correlates well with the effective charge transfer energy. (C) 2010 The Ceramic Society of Japan. All rights reserved.

引用

页码：993 / 996

页数：4

共 22 条

[1] CONTROLLED-VALENCE PROPERTIES OF LA1-XSRXFEO3 AND LA1-XSRXMNO3 STUDIED BY SOFT-X-RAY ABSORPTION-SPECTROSCOPY [J].