Synthesis of band-gap-reduced p-type ZnO films by Cu incorporation

被引：64

作者：

Ahn, Kwang-Soon ^{[1
]}

Deutsch, Todd ^{[1
]}

Yan, Yanfa ^{[1
]}

Jiang, Chun-Sheng ^{[1
]}

Perkins, Craig L. ^{[1
]}

Turner, John ^{[1
]}

Al-Jassim, Mowafak ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 02期

关键词：

D O I：

10.1063/1.2756517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

p-type ZnO thin films with significantly reduced band gaps were synthesized by heavy Cu incorporation at room temperature and followed by postdeposition annealing at 500 degrees C in air for 2 h. All the films were synthesized by rf magnetron sputtering on F-doped tin oxide-coated glass. The p-type conductivity was confirmed by Mott-Schottky plots and illuminated I-V analysis. The Cu+1 acceptor states (at substitutional sites) and their band-gap reduction were demonstrated by UV-visible absorption and x-ray excited valence band measurements. (C) 2007 American Institute of Physics.

引用

页数：6

共 27 条

[1] Visible-light photocatalysis in nitrogen-doped titanium oxides [J].