Fabrication of self-supported Si nano-structure with STM

被引:3
作者
Hamanaka, H
Ono, T
Esashi, M
机构
来源
MEMS 97, PROCEEDINGS - IEEE THE TENTH ANNUAL INTERNATIONAL WORKSHOP ON MICRO ELECTRO MECHANICAL SYSTEMS: AN INVESTIGATION OF MICRO STRUCTURES, SENSORS, ACTUATORS, MACHINES AND ROBOTS | 1997年
关键词
D O I
10.1109/MEMSYS.1997.581791
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
A self-supported Si nano-structure was fabricated on a Si diaphragm using STM induced anodization and anisotropic Si etching. The width and the thickness of the nano-structure were both approximately 200 nm. For the fabrication of the nano-structure, a very thin double-layered diaphragm which consist of a top Si layer (160 nm) and buried-SiO2 layer (100) was employed. This diaphragm was prepared by etching a SIMOX wafer in TMAH solution from the back side. The top Si layer was protected from the etchant with the buried-SiO2, and used for Si nano-structure. Oxide line pattern was delineated by STM induced anodization of a hydrogen-terminated Si surface. This top Si-layer having anodized-pattern was selectively etched in a hydrazine solution. Anodized oxide patterns act as masks to form Si nano-structures during the etching process. The buried-SiO2 layer was then etched out to release the nano-structure. A supercritical drying method was used for drying the nano-structure after etching the buried-SiO2 layer in buffered HF. The widths of the anodized-oxide were observed to be approximately 30 nm by a TEM investigation. Since the Si (100) layer is wet etched anisotropicaly, the width of the structure was enlarged approximately 200 nm.
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页码:153 / 158
页数:6
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