Czochralski growth of RE3Ga5SiO14 (RE = La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity

被引：46

作者：

Sato, J

Takeda, H

Morikoshi, H

Shimamura, K

Rudolph, P

Fukuda, T

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] TDK Corp, Ctr Mat Res, Narita 2860805, Japan

[3] Inst Crystal Growth, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 191卷 / 04期

关键词：

Czochralski growth; gallates; rare earth substitution; transmittance; piezoelectricity;

D O I：

10.1016/S0022-0248(98)00362-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Pr3Ga5SiO14 and Nd3Ga5SiO14 single crystals with constant diameter of 22 mm and lengths up to 145 mm have been grown by the Czochralski method, The phase identification, site occupancy of cations and axial lattice parameter distribution were determined by X-ray analysis. The transmission spectra within the 340-3200 nm wavelength region were measured, The centre of interest are the piezoelectric properties of (2 (1) over bar 0) and (0 1 0) plates in comparison with former grown La3Ga5SiO14 crystals in order to find out the influence of the rare earth substitution of La3+ by Pr3+ and Nd3+ on the piezoelectric strain constant d(11). A decrease of /d(11)/ with increasing atomic number was found giving the hint to the substitution of lanthanum by further elements with larger atomic radii, (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：746 / 753

页数：8

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