Low-pressure chemical vapour deposition growth of high-quality ZnO films on epi-GaN/α-Al2O3

被引：36

作者：

Ataev, BM ^{[1
]}

Lundin, WV

Mamedov, VV

Bagamadova, AM

Zavarin, EE

机构：

[1] Russian Acad Sci, Daghestan Sci Ctr, Inst Phys, Makhachkala 367003, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 257000, Russia

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2001年 / 13卷 / 09期

关键词：

D O I：

10.1088/0953-8984/13/9/103

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present the first results on (0001) ZnO/(0001) epi-GaN/(0001) alpha -Al2O3 heterostructure fabrication combining metal-organic vapour phase epitaxy and low-pressure chemical vapour deposition methods. The surface morphologies of the films were studied, and x-ray and reflection high-energy electron diffraction measurements were made, which showed a high degree of structural perfection of the ZnO films, with crystallite misorientation as low as 21'. The measured photoluminescence spectra of the films featured prevailingly emission within the excitonic region.

引用

页码：L211 / L214

页数：4

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