N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

被引：67

作者：

Kanbara, T

Shibata, K

Fujiki, S

Kubozono, Y ^{[1
]}

Kashino, S

Urisu, T

Sakai, M

Fujiwara, A

Kumashiro, R

Tanigaki, K

机构：

[1] Okayama Univ, Dept Chem, Okayama 7008530, Japan

[2] Japan Sci & Technol Corp, CREST, Kawaguchi 3320012, Japan

[3] Okazaki Natl Res Inst, Inst Mol Sci, Dept Vacuum UV Photosci, Okazaki, Aichi 4448585, Japan

[4] Japan Adv Inst Sci & Technol, Ishikawa 9231292, Japan

[5] Osaka City Univ, Dept Mat Sci, Osaka 5588585, Japan

来源：

CHEMICAL PHYSICS LETTERS | 2003年 / 379卷 / 3-4期

关键词：

D O I：

10.1016/j.cplett.2003.07.025

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

N-channel field effect transistors (FETs) were fabricated with thin films of C-60 and Dy@C-82. A typical enhancement-type FET property was observed in C-60 FET above 220 K. The mobility Of C-60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C-82 FET was found to be a normally-on type FET, which has a property different from that for C-60 and C-70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C-60 and pentacene thin-film FETs. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：223 / 229

页数：7

共 21 条

[1] LOGIC GATES MADE FROM POLYMER TRANSISTORS AND THEIR USE IN RING OSCILLATORS [J].