Characterization of Ti/TiN/Pt contacts on n-type 6H-SiC epilayer at 650°C

被引：1

作者：

Okojie, RS ^{[1
]}

Ned, AA ^{[1
]}

Provost, G ^{[1
]}

Kurtz, AD ^{[1
]}

机构：

[1] Ford Microelect Inc, Colorado Springs, CO 80921 USA

来源：

1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE | 1998年

关键词：

D O I：

10.1109/HITEC.1998.676764

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

We report results of electrical characteristics of Ti/TiN/Pt contact metallization on n-type 6H-SiC epilayer as function of impurity concentration in the range of 3.3 x 10(17) cm(-3) to 1.9 x 10(19) cm(-3). The as-deposited contacts were rectifying, except for the highly doped sample. Only the lesser doped remained rectifying after samples were annealed at 1000 degrees C between .5 to 1 minute in argon, Bulk contact resistance ranging from factors of 10(-5) to 10(-4)Omega-cm(2) and Schottky barrier height in the range of .74 to 1.07 eV were obtained. The contact resistance remained appreciably stable after heat treatment at 650 degrees C in air for sixty-five hours. Adhesion problems associated with metal deposition on pre-processed titanium layer was not observed, indicating excellent mechanical stability, Auger Electron Spectroscopy (AES) revealed the out-diffusion of titanium-silicon species and probable formation of titanium carbide as the new interface layer with the 6H-SiC epilayer.

引用

页码：79 / 83

页数：5