High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN - based structures

被引：17

作者：

Grzegory, I ^{[1
]}

机构：

[1] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期

关键词：

pressure grown GaN crystals; GaN homoepitaxy;

D O I：

10.1016/S0921-5107(00)00786-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The application of the pressure grown GaN single crystalline substrates allows to grow near dislocation free layer structures by both MOCVD and MBE. This is demonstrated by X-ray, AFM, TEM and defect selective etching results showing high structural perfection of both GaN substrates and epitaxial structures. The properties of these near dislocation free epitaxial layers and structures indicate that dislocations are the important factor limiting radiative efficiency of nitrides, especially at high excitations. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：30 / 34

页数：5

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