An infrared probe of tunable dielectrics in metal-oxide-semiconductor structures

被引：8

作者：

Li, ZQ ^{[1
]}

Wang, GM

Mikolaitis, KJ

Moses, D

Heeger, AJ

Basov, DN

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Univ Calif Santa Barbara, Inst Polymers & Organ Solids, Santa Barbara, CA 93106 USA

[3] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 22期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1942645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A composite metal-polymer electrode is designed to investigate electric-field-induced changes of the dielectric function of gate insulators in metal-oxide-semiconductor structures using infrared spectroscopy. We studied structures based on TiO2 dielectric insulator on doped silicon, a combination commonly used in field-effect transistors. It is shown that the voltage-induced changes of the dielectric constant in TiO2 originate from a modification of the lattice vibration modes of this compound. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 18 条

[1] Electric-field-induced soft-mode hardening in SrTiO3 films [J].