Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon

被引：185

作者：

Bradby, JE ^{[1
]}

Williams, JS

Wong-Leung, J

Swain, MV

Munroe, P

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, RSPhysSE, Canberra, ACT 0200, Australia

[2] Univ Sydney, Dept Mech & Mechatron Engn, Biomat Sci Res Unit, Eveleigh, NSW 1430, Australia

[3] Univ New S Wales, Electron Microscope Unit, Sydney, NSW 2052, Australia

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 23期

关键词：

D O I：

10.1063/1.1332110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spherical indentation of crystalline silicon has been studied using cross-sectional transmission electron microscopy (XTEM). Indentation loads were chosen below and above the yield point for silicon to investigate the modes of plastic deformation. Slip planes are visible in the XTEM micrographs in both indentation loads studied. A thin layer of polycrystalline material has been identified (indexed as Si-XII from diffraction patterns) on the low-load indentation. The higher-load indentation revealed a large region of amorphous silicon. The sequence of structural deformation by indentation in silicon has been observed with the initial deformation mechanism being slip until phase transformations can take place. (C) 2000 American Institute of Physics. [S0003-6951(00)05450-4].

引用

页码：3749 / 3751

页数：3

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