The two-flux composite fermion series of fractional quantum hall states in strained (100) Si

被引:3
作者
Lai, K [1 ]
Pan, W
Tsui, DC
Lyon, S
Muhlberger, M
Schaffler, F
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
[3] Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2004年 / 18卷 / 27-29期
关键词
strained Si; composite fermion; fractional quantum Hall effect;
D O I
10.1142/S0217979204026950
中图分类号
O59 [应用物理学];
学科分类号
摘要
Magnetotransport properties axe studied in a high-mobility 2DES in the strained Si quantum well. We observe around v = 1/2 the two-flux composite fermion (CF2) series of the FQHE states at v = 2/3, 3/5, 4/7, and at v = 4/9, 2/5, 1/3. Of the CF series, the v = 3/5 state is weaker than the nearby 4/7 state and the 3/7 state is missing, resembling the observation that the v = 3 is weaker than the v = 4 state. Our data indicate that the CF model still applies for the multivalley Si/SiGe system when taking into account the two-fold valley degeneracy.
引用
收藏
页码:3533 / 3535
页数:3
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