Artificial substrates for n- and p-type SiGe heterostructure field-effect transistors

被引：11

作者：

Hackbarth, T ^{[1
]}

Kibbel, H ^{[1
]}

Glueck, M ^{[1
]}

Hoeck, G ^{[1
]}

Herzog, HJ ^{[1
]}

机构：

[1] Daimler Benz AG, Res Ctr Ulm, D-89081 Ulm, Germany

来源：

THIN SOLID FILMS | 1998年 / 321卷

关键词：

relaxed buffers; SiGe MODFETs; surface roughness;

D O I：

10.1016/S0040-6090(98)00462-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The high carrier mobility in SiGe heterostructure layers enable an increased RF performance of field-effect transistors (FETs) compared with standard metal-oxide semiconductor (MOS) devices. Both p- and n-type transistors require relaxed SiGe buffer layers as artificial substrates. In this paper, the influence of molecular beam epitaxy (MBE) growth parameters on the surface morphology and crystal quality of strain relieved SiGe buffers on Si is discussed. The surface roughness of graded and constant composition buffers grown under different conditions is related to electrical results. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：136 / 140

页数：5

共 4 条

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[3]

GLUECK M, 1997, EL LETT, V33, P335

[4]

GLUECK M, 1998, IN PRESS PHYSICA A

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