Silicon micromachined EBG resonator and two-pole filter with improved performance characteristics

被引：9

作者：

Euler, T ^{[1
]}

Papapolyinerou, J ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2003年 / 13卷 / 09期

关键词：

electromagnetic bandgap structures (EBG); micromachining; PBG; planar filter; wireless application;

D O I：

10.1109/LMWC.2003.817132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

dA novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebyshev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 mum thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds.

引用

页码：373 / 375

页数：3

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Joannopoulos J. D., 1995, PHOTONIC CRYSTALS

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[5]

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