Simulation of rapid thermal annealed boron ultra-shallow junctions in inert and oxidizing ambient

被引：5

作者：

Lerch, W ^{[1
]}

Gluck, M ^{[1
]}

Stolwijk, NA ^{[1
]}

Walk, H ^{[1
]}

Schafer, M ^{[1
]}

Marcus, SD ^{[1
]}

Downey, DF ^{[1
]}

Chow, JW ^{[1
]}

Marquardt, H ^{[1
]}

机构：

[1] STEAG AST Elekt GmbH, Dornstadt, Germany

来源：

RAPID THERMAL AND INTEGRATED PROCESSING VII | 1998年 / 525卷

关键词：

D O I：

10.1557/PROC-525-237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rapid Thermal Annealing (RTA) is indispensable for the formation of ultra-shallow source/drain junctions. To improve the annealing conditions, a fundamental understanding of the influences on the diffusion/activation process is necessary. Ion implantations of 1 keV boron at a dose of Phi approximate to 1.10(15) cm(-2) are annealed in a SHS2800 epsilon RTP-system under controlled concentrations of oxygen in nitrogen ambient (0-1 ppm up to 1%). Concentration-depth profiles, measured by Secondary Ion Mass Spectroscopy (SIMS), are simulated within the framework of the kick-out model involving diffusion enhancement via supersaturation of silicon self-interstitials. The validity of this interpretation is supported by the simulated results which are in good agreement with experimental data. After RTA for 10 s at 1050 degrees C the junctions are varying within a range of 800 Angstrom to 1400 Angstrom depending on the annealing ambient. The results of the simulation yield finite values of self-interstitial supersaturation as a function of the oxygen concentration.

引用

页码：237 / 255

页数：19