Room-temperature ultraviolet light-emitting zinc oxide micropatterns prepared by low-temperature electrodeposition and photoresist

被引：57

作者：

Izaki, M ^{[1
]}

Watase, S ^{[1
]}

Takahashi, H ^{[1
]}

机构：

[1] Osaka Municipal Tech Res Inst, Dept Inorgan Chem, Osaka 5368553, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 24期

关键词：

D O I：

10.1063/1.1633677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality (0001)-oriented zinc oxide (ZnO) micropatterns, 5-mum-wide microlines and 5-mum-diam microdot arrays, have been prepared on (111) Au-coated (100) Si wafer substrates by electrodeposition at 333 K in zinc nitrate aqueous solution and industrially employed positive type photoresist techniques. The ZnO micropatterns emitted ultraviolet light at photon energy of 3.25 eV due to recombination of bound excitons and visible light at 2.37 and 2.80 eV at room temperature. (C) 2003 American Institute of Physics.

引用

页码：4930 / 4932

页数：3

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