Preparation of indium tin oxide films and doped tin oxide films by an ultrasonic spray CVD process

被引：82

作者：

Zhou, ZB ^{[1
]}

Cui, RQ

Pang, QJ

Wang, YD

Meng, FY

Sun, TT

Ding, ZM

Yu, XB

机构：

[1] Shanghai Jiao Tong Univ, Dept Phys, Solar Energy Inst, Shanghai 200030, Peoples R China

[2] Shanghai Jiao Tong Univ, Inst Anorgan Analyt & Phys Chem, Solar Energy Inst, Shanghai 200030, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2001年 / 172卷 / 3-4期

关键词：

ultrasonic spraying CVD; indium tin oxide thin films; F-doped SnO2 films;

D O I：

10.1016/S0169-4332(00)00862-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We deposited high quality doped indium oxide and tin oxide thin films by an improved spray CVD process, which we characterize as ultrasonic spraying. The microstructure and electrical properties of these thin films are analyzed by XRD, AFM, and van der Pauw four-point-probe technique and the results discussed. Absorptance and transmittance spectra in the visible-near-ultraviolet spectral region are also presented. The optical band gaps are 3.90 eV for Sn-doped In2O3 and 4.05 eV for F-doped SnO2. The minima of electrical resistivity of Sn-doped In2O3 and F-doped SnO2 films are 1.5 x 10(-4) and 4.0 x 10(-4) Omega cm, respectively, (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：245 / 252

页数：8

共 14 条

[1] Highly conducting indium tin oxide (ITO) thin films deposited by pulsed laser ablation [J].

Adurodija, FO ;

Izumi, H ;

Ishihara, T ;

Yoshioka, H ;

Yamada, K ;

Matsui, H ;

Motoyama, M .

THIN SOLID FILMS, 1999, 350 (1-2) :79-84

[2]

DCULLION B, 1978, ELEMENTS XRAY DIFFRA

[3] TIN OXIDE GATED METAL-INSULATOR-SEMICONDUCTOR SWITCH DIODE FOR ROOM-TEMPERATURE HIGH-SPEED GAS SENSING APPLICATIONS [J].

FANG, YK ;

CHEN, FY ;

HWANG, JD ;

FANG, BC ;

CHEN, JR .

APPLIED PHYSICS LETTERS, 1993, 62 (05) :490-492

[4] DEPENDENCE OF PHOTOVOLTAGES OF SPRAY-DEPOSITED INDIUM TIN OXIDE SILICON-OXIDE SILICON JUNCTION SOLAR-CELLS ON SPRAY SOLVENTS [J].

ISHIDA, T ;

KOUNO, H ;

KOBAYASHI, H ;

NAKATO, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (05) :1357-1361

[5] Preparation of tin oxide monolith by the sol-gel method from inorganic salt [J].

Kobayashi, Y ;

Okamoto, M ;

Tomita, A .

JOURNAL OF MATERIALS SCIENCE, 1996, 31 (23) :6125-6127

[6]

LANE MV, 1926, Z KRYST, V64, P115

[7] ANALYSIS OF THE EFFECTS OF SUBSTRATE-TEMPERATURE, CONCENTRATION OF TIN CHLORIDE AND NATURE OF DOPANTS ON THE STRUCTURAL AND ELECTRICAL-PROPERTIES OF SPRAYED SNO2 FILMS [J].

MESSAD, A ;

BRUNEAUX, J ;

CACHET, H ;

FROMENT, M .

JOURNAL OF MATERIALS SCIENCE, 1994, 29 (19) :5095-5103

[8]

Pauw L. J. v. d., 1958, PHILLIPS TECHNICAL R, V20, P220, DOI DOI 10.4236/JMP.2013.411179

[9] SPRAYED FILMS OF INDIUM TIN OXIDE AND FLUORINE-DOPED TIN OXIDE OF LARGE SURFACE-AREA [J].

POMMIER, R ;

GRIL, C ;

MARUCCHI, J .

THIN SOLID FILMS, 1981, 77 (1-3) :91-97

[10] Structural studies of ITO thin films with the Rietveld method [J].

Quaas, M ;

Eggs, C ;

Wulff, H .

THIN SOLID FILMS, 1998, 332 (1-2) :277-281

← 1 2 →