Transistor effects and in situ STM of redox molecules at room temperature

被引:36
作者
Albrecht, T [1 ]
Guckian, A
Ulstrup, J
Vos, JG
机构
[1] Tech Univ Denmark, Dept Chem, DK-2800 Lyngby, Denmark
[2] Dublin City Univ, Sch Chem Sci, Dublin 9, Ireland
关键词
charge transfer; conductivity; molecular electronics; resonant tunneling transistors; transition metal compounds;
D O I
10.1109/TNANO.2005.851280
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Inorganic transition metal complexes were identified as potential candidates for transistor-like behavior in an electrochemical scanning tunnelling microscope (STM) configuration at room temperature. The theoretical background has been established based on condensed matter charge transfer theory. It predicts a distinct increase of the tunnelling current close to the equilibrium potential, i.e., if molecular bridge states are tuned into resonance with the Fermi levels of the enclosing electrodes. The complexes display robust electrochemistry on Au(111) electrode surfaces. STM images at molecular resolution reveal detailed information on their surface structure and scanning tunnelling spectroscopy experiments have shown clear evidence of transistor-like behavior.
引用
收藏
页码:430 / 434
页数:5
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