A single-crystal Si-resonator with on-chip readout amplifier in standard CMOS

被引：8

作者：

Bertz, A ^{[1
]}

Symanzik, H

Steiniger, C

Höffer, A

Griesbach, K

Stegemann, K

Ebest, G

Gessner, T

机构：

[1] Chemnitz Univ Technol, Ctr Microtechnol, D-09107 Chemnitz, Germany

[2] Chemnitz Univ Technol, Chair Elect Devices, Fac Elect Engn & IT, D-09107 Chemnitz, Germany

[3] Zentrum Mikroelekt Dresden AG, D-01109 Dresden, Germany

[4] Fraunhofer Inst Reliabil & Microintegrat, Dept Micro Devices & Equipment, D-09126 Chemnitz, Germany

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2001年 / 93卷 / 02期

关键词：

micromachining; single-crystal silicon; CMOS; oscillator; resonator; monolithic integration;

D O I：

10.1016/S0924-4247(01)00650-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The monolithic integration of electronic circuits in standard CMOS technology with high aspect ratio micromechanical structures based on single-crystal silicon is presented. For this technology neither silicon on insulator (SOI) wafers nor wet processes are required. A resonator device is chosen for technology demonstration. The effect of micromachining on parameters of CMOS transistors is detected and the usefulness of a final annealing step is confirmed. A novel electronic circuit design allows signal processing, even for low resonator signal levels and strong parasitic effects. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：163 / 172

页数：10

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