Nonvolatile memory effect of capacitance in polycrystalline spinel vanadate

被引：34

作者：

Takei, H. ^{[1
]}

Suzuki, T.

Katsufuji, T.

机构：

[1] Waseda Univ, Dept Phys, Tokyo 1698555, Japan

[2] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Tokyo 1690051, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 07期

关键词：

D O I：

10.1063/1.2771041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors found that capacitance of polycrystalline spinel FeV2O4 exhibits a magnetic-field dependence with hysteresis and takes two values at zero field depending on the direction of a small magnetic field (similar to 1000 G) applied prior to measurement. This behavior can be potentially used as a nonvolatile memory device in which the data are stored as a difference of capacitance through the change of magnetic-field directions. (C) 2007 American Institute of Physics.

引用

页数：3

共 9 条

[1] Magnetocapacitance without magnetoelectric coupling [J].