Diffusion and charge dynamics of negatively charged muonium in n-type GaAs

被引：60

作者：

Chow, KH

Hitti, B

Kiefl, RF

Dunsiger, SR

Lichti, RL

Estle, TL

机构：

[1] TRIUMF,VANCOUVER,BC V6T 2A3,CANADA

[2] UNIV BRITISH COLUMBIA,CANADIAN INST ADV RES,VANCOUVER,BC V6T 1Z1,CANADA

[3] UNIV BRITISH COLUMBIA,DEPT PHYS,VANCOUVER,BC V6T 1Z1,CANADA

[4] TEXAS TECH UNIV,DEPT PHYS,LUBBOCK,TX 79409

[5] RICE UNIV,DEPT PHYS,HOUSTON,TX 77251

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.76.3790

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report measurements on the dynamics of negatively charged muonium (Mu(-)) from 295 to 1000 K in heavily doped n-type GaAs:Si. The Mu(-) center begins to diffuse above 500 K with a hop rate described by an Arrhenius function nu = nu(0)e(-E mu/kBT) where nu(0) = 5.6(5) x 10(12) s(-1) and E(mu) = 0.73(1) eV. Above 700 K, relaxation from charge-state fluctuations is observed. The analysis of these data implies Mu(-) <-> Mu(0) conversions occur via alternating capture of holes and electrons, establishing Mu as a deep recombination center. Similar dynamics are expected for the isolated H- center in n-type GaAs.

引用

页码：3790 / 3793

页数：4

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