High electron mobility and ambipolar transport in organic thin-film transistors based on a π-stacking quinoidal terthiophene

被引：289

作者：

Chesterfield, RJ

Newman, CR

Pappenfus, TM

Ewbank, PC

Haukaas, MH

Mann, KR

Miller, LL

Frisbie, CD

机构：

[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 15期

关键词：

D O I：

10.1002/adma.200305200

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Thin-film transistors (TFTs) based on a new n-channel organic semiconductor (DCMT; see Figure) are reported. An electron mobility as high as 0.2 cm(2)/V s was observed, as well as ambipolar TFT behavior. Variable temperature measurements reveal that electron conduction is activated, with a small activation energy of 35 +/- 10 meV These results demonstrate that quinoidal oligothiophenes are a promising new class of organic semiconductors for TFTs.

引用

页码：1278 / +

页数：6

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