Selective area growth of GaN on Si substrate using SiO2 mask by metalorganic vapor phase epitaxy

被引：69

作者：

Kawaguchi, Y ^{[1
]}

Honda, Y

Matsushima, H

Yamaguchi, M

Hiramatsu, K

Sawaki, N

机构：

[1] Nagoya Univ, Sch Engn, Dept Elect, Chikusa Ku, Nagoya, Aichi 464, Japan

[2] Mie Univ, Fac Engn, Dept Elect & Elect Engn, Tsu, Mie 514, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 8B期

关键词：

GaN; selective area growth (SAG); epitaxial lateral overgrowth (ELO); submicron dot; Si substrate; cold cathode;

D O I：

10.1143/JJAP.37.L966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective area growth (SAG) of GaN on (111) Si substrate was studied using AlGaN as an intermediate layer. A hexagonal dot with a (0001) plane on the top and of a 5 mu m or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO2) mask. The facet structure revealed that the < 1120 > axis of hexagonal GaN is parallel to the < 110 > axis of the Si substrate. The cathodoluminescence (CL) spectrum at 133 K exhibited a strong near-band-edge emission hand for the submicron dots, which suggests excellent crystallinity. Epitaxial lateral overgrowth (ELO) of GaN on the Si substrate is demonstrated.

引用

页码：L966 / L969

页数：4

共 9 条

[1] OBSERVATION OF A NEGATIVE ELECTRON-AFFINITY FOR HETEROEPITAXIAL ALN ON ALPHA(6H)-SIC(0001) [J].

BENJAMIN, MC ;

WANG, C ;

DAVIS, RF ;

NEMANICH, RJ .

APPLIED PHYSICS LETTERS, 1994, 64 (24) :3288-3290

[2] FABRICATION OF GAN HEXAGONAL PYRAMIDS ON DOT-PATTERNED GAN/SAPPHIRE SUBSTRATES VIA SELECTIVE METALORGANIC VAPOR-PHASE EPITAXY [J].

KITAMURA, S ;

HIRAMATSU, K ;

SAWAKI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9B) :L1184-L1186

[3] GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer [J].

Kobayashi, NP ;

Kobayashi, JT ;

Dapkus, PD ;

Choi, WJ ;

Bond, AE ;

Zhang, X ;

Rich, DH .

APPLIED PHYSICS LETTERS, 1997, 71 (24) :3569-3571

[4]

MATSUSHIMA H, IN PRESS J CRYST GRO

[5] Growth of GaN and Al0.2Ga0.8N on patterened substrates via organometallic vapor phase epitaxy [J].

Nam, OH ;

Bremser, MD ;

Ward, BL ;

Nemanich, RJ ;

Davis, RF .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (5A) :L532-L535

[6] Graded electron affinity electron source [J].

Shaw, L ;

Gray, HF ;

Jensen, KL ;

Jung, TM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2072-2079

[7] GROWTH OF SINGLE CRYSTALLINE GAN FILM ON SI-SUBSTRATE USING 3C-SIC AS AN INTERMEDIATE LAYER [J].

TAKEUCHI, T ;

AMANO, H ;

HIRAMATSU, K ;

SAWAKI, N ;

AKASAKI, I .

JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :634-638

[8] Selective-area regrowth of GaN field emission tips [J].

Underwood, RD ;

Kapolnek, D ;

Keller, BP ;

Keller, S ;

Denbaars, SP ;

Mishra, UK .

SOLID-STATE ELECTRONICS, 1997, 41 (02) :243-245

[9] THE GROWTH OF SINGLE CRYSTALLINE GAN ON A SI SUBSTRATE USING ALN AS AN INTERMEDIATE LAYER [J].

WATANABE, A ;

TAKEUCHI, T ;

HIROSAWA, K ;

AMANO, H ;

HIRAMATSU, K ;

AKASAKI, I .

JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) :391-396

← 1 →