Photoelectrochemical capacitance-voltage measurements in GaN

被引：10

作者：

Stutz, CE

Mack, M

Bremser, MD

Nam, OH

Davis, RF

Look, DC

机构：

[1] USAF, Wright Lab, AAD, Wright Patterson AFB, OH 45433 USA

[2] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

[3] N Carolina State Univ, Raleigh, NC 27695 USA

[4] Wright State Univ, Univ Res Ctr, Dayton, OH 45435 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 05期

关键词：

carrier concentration depth profile; GaN; photoelectrochemical etching;

D O I：

10.1007/s11664-998-0182-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoelectrochemical etching of GaN, using a KOH solution and a 325 nm wavelength UV laser, has been used to obtain carrier concentration depth profiles. The photoelectrochemical capacitance-voltage measurements are supported with conventional depletion mode capacitance-voltage, secondary ion mass spectroscopy, and Hall measurements. The data show that steps in carrier concentration profiles can be accurately reproduced.

引用

页码：L26 / L28

页数：3

共 7 条

[1] Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers [J].