Quantum devices, MBE technology for the 21st century

被引:15
作者
Cho, AY [1 ]
Sivco, DL [1 ]
Ng, HM [1 ]
Gmachl, C [1 ]
Tredicucci, A [1 ]
Hutchinson, AL [1 ]
Chu, SNG [1 ]
Capasso, F [1 ]
机构
[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
关键词
nitrides; semiconducting IIIV materials; heterojunction semiconductor devices; laser diodes;
D O I
10.1016/S0022-0248(01)00623-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Many talks of molecular beam epitaxy as an important technology for the mass production of quantum devices will be presented in this conference. This talk will concentrate on the development and the unique features of quantum cascade lasers such as high-power output, tuning characteristics, and the extension to GaN material. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1 / 7
页数:7
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