Sputter deposition of gallium nitride films using a GaAs target

被引：60

作者：

Elkashef, N ^{[1
]}

Srinivasa, RS

Major, S

Sabharwal, SC

Muthe, KP

机构：

[1] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India

[2] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India

[3] Bhabha Atom Res Ctr, Tech Phys & Prototype Engn Div, Bombay 400085, Maharashtra, India

来源：

THIN SOLID FILMS | 1998年 / 333卷 / 1-2期

关键词：

deposition process; nitrides; semiconductors; sputtering;

D O I：

10.1016/S0040-6090(98)00550-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaAs was used as the target material for the deposition of GaN films by reactive sputtering. The films were grown at different compositions of the sputtering gas mixture (0-100% nitrogen in argon) at substrate temperatures of 450 and 550 degrees C. The films were studied using XRD and XPS techniques. Even a small quantity of nitrogen in the sputtering medium was found to prevent the formation of GaAs on the substrate. Films grown at 550 degrees C using 100% nitrogen as the sputtering-reactive gas were found to be single phase (0002) oriented hexagonal gallium nitride and revealed complete absence of arsenic. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：9 / 12

页数：4

共 20 条

[1]

BRIGGS D, 1979, PRACTICAL SURFACE AN

[2] OPTICAL-PROPERTIES OF GAN EPITAXIAL-FILMS GROWN BY LOW-PRESSURE CHEMICAL-VAPOR EPITAXY USING A NEW NITROGEN-SOURCE - HYDRAZOIC ACID (HN3) [J].

BU, Y ;

LIN, MC ;

FU, LP ;

CHTCHEKINE, DG ;

GILLILAND, GD ;

CHEN, Y ;

RALPH, SE ;

STOCK, SR .

APPLIED PHYSICS LETTERS, 1995, 66 (18) :2433-2435

[3] SELECTIVE GROWTH OF ZINCBLENDE, WURTZITE, OR A MIXED-PHASE OF GALLIUM NITRIDE BY MOLECULAR-BEAM EPITAXY [J].

CHENG, TS ;

JENKINS, LC ;

HOOPER, SE ;

FOXON, CT ;

ORTON, JW ;

LACKLISON, DE .

APPLIED PHYSICS LETTERS, 1995, 66 (12) :1509-1511

[4] DEPOSITION, CHARACTERIZATION, AND DEVICE DEVELOPMENT IN DIAMOND, SILICON-CARBIDE, AND GALLIUM NITRIDE THIN-FILMS [J].

DAVIS, RF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :829-837

[5] Room-temperature blue gallium nitride laser diode [J].

Fasol, G .

SCIENCE, 1996, 272 (5269) :1751-1752

[6] ELECTRICAL AND OPTICAL PROPERTIES OF RF-SPUTTERED GAN AND INN [J].

HOVEL, HJ ;

CUOMO, JJ .

APPLIED PHYSICS LETTERS, 1972, 20 (02) :71-&

[7] EFFECT OF SUBSTRATE PRETREATMENT ON GROWTH OF GAN ON (0001)SAPPHIRE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

HWANG, CY ;

SCHURMAN, MJ ;

MAYO, WE ;

LI, Y ;

LU, Y ;

LIU, H ;

SALAGAJ, T ;

STALL, RA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :672-675

[8] DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE [J].

KINGSLEY, CR ;

WHITAKER, TJ ;

WEE, ATS ;

JACKMAN, RB ;

FOORD, JS .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3) :78-82

[9] PREPARATION AND PROPERTIES OF III-V NITRIDE THIN-FILMS [J].

KUBOTA, K ;

KOBAYASHI, Y ;

FUJIMOTO, K .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) :2984-2988

[10] THE GROWTH OF HIGHLY RESISTIVE GALLIUM NITRIDE FILMS [J].

LAKSHMI, E ;

MATHUR, B ;

BHATTACHARYA, AB ;

BHARGAVA, VP .

THIN SOLID FILMS, 1980, 74 (01) :77-82

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