Advances in large area CIGS technology

被引：6

作者：

Delahoy, A ^{[1
]}

Bruns, J ^{[1
]}

Chen, LF ^{[1
]}

Akhtar, M ^{[1
]}

Kiss, Z ^{[1
]}

Contreras, M ^{[1
]}

机构：

[1] Energy Photovoltaics Inc, Lawrenceville, NJ 08648 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916163

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper describes results in several areas that, taken as a whole, significantly contribute to the advancement of CIGS PV technology based on vacuum deposition. These results include the large area sputtering of Mo suitable for very high efficiency cells, the improved delivery of Cu by linear source evaporation for large area vacuum deposition of CIGS, a promising non-Cd buffer layer capable of vacuum deposition, and improvement of the properties of doped ZnO.

引用

页码：1437 / 1440

页数：4

共 8 条

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[2]

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[3]

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