Doping dependent density of states and pseudogap behavior in La2-xSrxCuO4.

被引：146

作者：

Ino, A

Mizokawa, T

Kobayashi, K

Fujimori, A

Sasagawa, T

Kimura, T

Kishio, K

Tamasaku, K

Eisaki, H

Uchida, S

机构：

[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 113, Japan

[2] Univ Tokyo, Dept Superconduct, Bunkyo Ku, Tokyo 113, Japan

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.81.2124

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have made a high-resolution photoemission study of La2-xSrxCuO4 in a wide hole concentration (x)range from a heavily overdoped metal to an undoped insulator. As x decreases, the spectral density of states at the chemical potential (mu) is suppressed with an x dependence similar to the suppression of the electronic specific heat coefficient. In the underdoped region, the spectra show a pseudogap structure on the energy scale of 0.1 eV. The width of the pseudogap increases with decreasing x following the x dependence of the characteristic temperatures of the magnetic susceptibility and the Hall coefficient.

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页码：2124 / 2127

页数：4

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