A nonvolatile ferroelectric memory device with a floating gate

被引：12

作者：

Chen, FY ^{[1
]}

Fang, YK ^{[1
]}

Sun, MJ ^{[1
]}

Chen, JR ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT MAT SCI & ENGN,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 21期

关键词：

D O I：

10.1063/1.118034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An adaptive ferroelectric held-effect transistor (FET) with a floating gate has been developed using a thin film of lead titanate (PbTiO3) deposited on a n/p(+) substrate by rf sputtering. This device utilizes the charge storage on the floating gate to control the n layer conductivity of a n/p(+) Si substrate and performs a memory function, in which the drain conductance changes in proportion to the charge storage density on the floating gate. The device is a bulk channel field transistor structure and different from the conventional surface channel-type floating gate memory device. Thus, it possesses higher mobility and fast access time (<160 ns). The FET has low write/erase voltages (less than or equal to 10 V) and its write/erase cycles are more than 10(6). (C) 1996 American Institute of Physics.

引用

页码：3275 / 3276

页数：2